Patent · US Expired

Apparatus for manufacturing high quality crystals

US4267154A · kind A · utility

3Cited by
4References
4Claims
0Family size

Assignees

Inventors

Key dates

Filing dateAug 20, 1979
Grant dateMay 12, 1981
Priority date
Expiry dateAug 20, 1999

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T117/1092
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Method and apparatus for manufacturing high quality crystals whereby crystal growth occurs from a melt or a gas phase and during such growth, the growing crystals are subjected to a gravitational acceleration generating and reinforcing the development of a chronologically constant, highly stationary, convection current within the growing crystal. The apparatus includes a centrifuge means having a crystal growth means mounted thereon, along with means for controlling the centrifuge and for controlling the thermal system associated with the crystal growth means.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.