Apparatus for manufacturing high quality crystals
US4267154A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Aug 20, 1979 |
| Grant date | May 12, 1981 |
| Priority date | — |
| Expiry date | Aug 20, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method and apparatus for manufacturing high quality crystals whereby crystal growth occurs from a melt or a gas phase and during such growth, the growing crystals are subjected to a gravitational acceleration generating and reinforcing the development of a chronologically constant, highly stationary, convection current within the growing crystal. The apparatus includes a centrifuge means having a crystal growth means mounted thereon, along with means for controlling the centrifuge and for controlling the thermal system associated with the crystal growth means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.