Reference electrode of insulated gate field effect transistor
US4269682A · kind A · utility
39Cited by
5References
18Claims
0Family size
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Key dates
| Filing date | Dec 11, 1978 |
| Grant date | May 26, 1981 |
| Priority date | — |
| Expiry date | Dec 11, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02532
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A reference electrode of an insulated gate field effect transistor having the surface of the gate region thereof coated with a hydrophobic organic polymer membrane. Since this reference electrode is much smaller in size than conventional reference electrodes, an integrated measurement system can easily be constructed by using this reference electrode. This measurement system is especially effective for measuring various ions in the living body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.