Growth of thallium-doped silicon from a tin-thallium solution
US4270973A · kind A · utility
1Cited by
4References
5Claims
0Family size
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Key dates
| Filing date | Apr 28, 1980 |
| Grant date | Jun 2, 1981 |
| Priority date | — |
| Expiry date | Apr 28, 2000 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing single crystals of silicon doped with thallium for use as an extrinsic silicon photodetector of 3-5 um infrared radiation which will operate above 77 K.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.