Patent · US Expired

Method of obtaining polycrystalline silicon and workpiece useful therein

US4271235A · kind A · utility

2Cited by

8References

8Claims

0Family size

Inventors

Lawrence R. Hill · New York, US
Dennis Garbis · Huntington Station, US
Robert Heller · Stony Brook, US

Key dates

Filing date	Dec 26, 1979
Grant date	Jun 2, 1981
Priority date	—
Expiry date	Dec 26, 1999

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/31663
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Polycrystalline silicon is obtained by providing a silicon wafer having disposed over at least one face thereof a base coating of oxide, nitride or oxynitride composition, forming a substantially pinhole-free and scratch-free layer of carbon on said base coating over at least the face, forming on the face of the carbon layer a layer of polycrystalline silicon, and removing the silicon layer from the protective coating. Any of the carbon layer adhering to the silicon layer is easily removable to provide the silicon layer separate from the substrate. The wafer/coating unit is reusable in the procedure. The wafer/coating/carbon layer unit comprises a workpiece useful in the practice of the invention.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.