Gallium arsenide devices having reduced surface recombination velocity

US4273594A · kind A · utility

Assignee

• Bell Telephone Laboratories, Inc. · US

Inventors

• Adam Heller · Austin, US
• Harry J. Leamy · Summit, US
• Barry Miller · New Providence, US
• Ronald J. Nelson · Berkeley Heights, US
• Bruce A. Parkinson · Fort Collins, US

Key dates

• Filing date: Oct 5, 1979
• Grant date: Jun 16, 1981
• Expiry date: Oct 5, 1999

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/12528

Abstract

Semiconductor devices using chemically treated n-type GaAs have greatly reduced surface recombination velocities. A preferred embodiment uses fractional monolayers of ruthenium on the GaAs surface.