Phosphorus-nitrogen-oxygen composition and method for making such composition and applications of the same
US4275409A · kind A · utility
0Cited by
6References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 25, 1979 |
| Grant date | Jun 23, 1981 |
| Priority date | — |
| Expiry date | May 25, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composition is described which comprises amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400.degree.-900.degree. C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.