Semiconductor substrate and a manufacturing method thereof
US4276114A · kind A · utility
43Cited by
10References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 1979 |
| Grant date | Jun 30, 1981 |
| Priority date | — |
| Expiry date | Feb 6, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a semiconductor substrate and a method of manufacturing the same. In a semiconductor manufacturing process for a Si single crystal wafer or the like, before the step of mirror polishing, the rear surface of a Si wafer is ground to form a damaged layer having a certain fixed thickness, the Si wafer is subsequently etched by chemical etching if desired, and the rear surface is further formed with an oxide film by thermal oxidation if desired, whereby a semiconductor substrate exhibiting an intense gettering effect is manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.