Growth of synthetic diamonds having altered electrical conductivity
US4277293A · kind A · utility
13Cited by
6References
12Claims
0Family size
Inventors
Key dates
| Filing date | Aug 20, 1979 |
| Grant date | Jul 7, 1981 |
| Priority date | — |
| Expiry date | Aug 20, 1999 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B1/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing a diamond crystal which comprises bombarding the diamond with a flux of carbon ions of sufficient energy to penetrate the diamond crystal and cause crystal growth which is at least predominantly internal, the temperature of the crystal being at least 400.degree. C. and less than the graphitization temperature, such that the diamond crystal structure is maintained during growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.