Process for direct thermal nitridation of silicon semiconductor devices
US4277320A · kind A · utility
59Cited by
5References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 1, 1979 |
| Grant date | Jul 7, 1981 |
| Priority date | — |
| Expiry date | Oct 1, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for the direct thermal nitridation of silicon semiconductor devices in which the semiconductor body is placed in an atmosphere of N.sub.2, at a temperature of less than 1000.degree. C. The N.sub.2 is activated by an RF electrical field which ionizes the nitrogen, which then combines with the silicon surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.