Photodiode having enhanced long wavelength response
US4277793A · kind A · utility
88Cited by
4References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 16, 1979 |
| Grant date | Jul 7, 1981 |
| Priority date | — |
| Expiry date | Jul 16, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
The light entry surface or back surface of an avalanche or p-i-n photodiode is contoured in a regular array of indentations which are hemispherical or almost hemispherical in shape. Light incident on the photodiode undergoes multiple interactions with the contoured surface, thus reducing the entry surface reflectivity and increasing the optical path length in the photodiode, and thereby enhancing its long wavelength response.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.