Method of producing a metal-semiconductor field-effect transistor
US4277882A · kind A · utility
13Cited by
5References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 4, 1978 |
| Grant date | Jul 14, 1981 |
| Priority date | — |
| Expiry date | Dec 4, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal-semiconductor field-effect transistor is formed by providing a blanket layer of the same conductivity type as the semiconductor body, with field oxide subsequently being grown, and with a region of opposite conductivity type being formed to extend partially under the field oxide, the initial blanket layer acting as the field implant region of the field-effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.