Method of making ion implanted reverse-conducting thyristor
US4278476A · kind A · utility
8Cited by
10References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1979 |
| Grant date | Jul 14, 1981 |
| Priority date | — |
| Expiry date | Dec 5, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/084
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a pnpn semiconductor reverse conducting thyristor comprises the steps of forming n-type semiconductor layers on both sides of a p-type semiconductor substrate for forming an n-type emitter layer and an n-type anode-base layer. A p-type semiconductor impurity region is formed in the n-type anode-base layer for forming a p-type anode layer. A p.sup.+ -type semiconductor layer is ion implanted in the p-type substrate adjacent to the n-type cathode emitter layer by irradiating it with boron atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.