Large scale semiconductor integrated circuit device
US4278897A · kind A · utility
29Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1978 |
| Grant date | Jul 14, 1981 |
| Priority date | — |
| Expiry date | Dec 28, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A large scale semiconductor integrated circuit device comprising plural transistors and resistors formed in one semiconductor substrate, and many emitter-coupled circuits formed by connecting the transistors and resistors with a double metallic layer on the substrate surface. Moreover, between the groups and respective input/output terminals, large scale transistors are provided for outputting the emitter-follower circuits. These groups containing the emitter coupled circuits are connected to the input/output terminals by the double metallic wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.