Semiconductor device having cross wires
US4278989A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 1979 |
| Grant date | Jul 14, 1981 |
| Priority date | — |
| Expiry date | Jan 15, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/927
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lower member of a cross wire structure formed in a semiconductor device, such as an MIS type semiconductor memory device, is provided with a structure of at least two layers of an impurity-containing polycrystalline semiconductor material according to the method disclosed. These layers are connected in parallel and their resistance is thus decreased. Furthermore, since these layers may be formed within insulating films over a semiconductor substrate, the degree of integration of the semiconductor device may be enhanced. The method for producing the cross electrodes allows simultaneous fabrication of other semiconductor devices, for instance MIS devices with components commonly fabricated with the cross electrode structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.