Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material
US4279670A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 6, 1979 |
| Grant date | Jul 21, 1981 |
| Priority date | — |
| Expiry date | Aug 6, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing doped gallium arsenide semiconductor layers for semiconductor devices wherein a predetermined flow of a reactive substance is directed over a material having a dopant and a relatively low vapor pressure. The reactive substance chemically reacts with the material to produce a corresponding flow of a doping vapor. The doped gallium arsenide semiconductor layer is deposited on a gallium arsenide substrate by vapor phase epitaxy from material including the doping vapor. With such method, accurate control of the magnitude of the dopant is obtained by control of the reactive substance, the doping material being supplied by a non-volatile source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.