Method of forming thin niobium carbonitride superconducting films of exceptional purity
US4279969A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1980 |
| Grant date | Jul 21, 1981 |
| Priority date | — |
| Expiry date | Feb 20, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/816
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Thin superconducting NbCN films are deposited by reactive sputtering onto a dielectric substrate inside a vacuum chamber. The substrate is heated to a temperature of 600.degree.-1200.degree. C., ultra-pure Argon is introduced into the chamber, and niobium is presputtered from a high-purity target onto a shutter. A cyanogen and nitrogen gas mixture is introduced into the chamber at a rate of approximately 10.sup.-6 Torr liters/sec, and a shutter is opened exposing the substrate to the sputtered niobium. The deposited niobium reacts with the cyanogen-nitrogen gas mixture to form NbCN films of exceptional purity, and which exhibit superior superconductor properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.