Patent · US Expired

Photovoltaic device and method of manufacturing thereof

US4281208A · kind A · utility

71Cited by
5References
75Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 29, 1980
Grant dateJul 28, 1981
Priority date
Expiry dateJan 29, 2000

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S136/291

Abstract

A photovoltaic device comprises a light transmissive insulating substrate, on which a plurality of isolated transparent electrodes are formed. An amorphous silicon layer of a PIN structure, for example, is formed on the substrate continuously and in common to the respective transparent electrodes. Aluminum electrodes are formed on the surface of the amorphous silicon layer so as to correspond to the respective transparent electrodes. The transparent electrodes and the aluminum electrodes are electrically connected to the adjacent opponent electrodes to withdraw in a series fashion photovoltaic power generated at the respective photoelectric conversion regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.