Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity

US4282542A · kind A · utility

Assignee

• Licentia Patent-Verwaltungs-GmbH · DE

Inventors

• Dieter Silber · Eschborn, DE
• Marius Fullmann · Neu-Isenburg, DE
• Wolfgang Winter · Eschborn, DE

Key dates

• Filing date: Dec 4, 1979
• Grant date: Aug 4, 1981
• Expiry date: Dec 4, 1999

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/221

Abstract

An interference-potential-compensated thyristor comprising, a common emitter zone of one conductivity type, a common main base zone of an opposite conductivity type in contact with said common emitter zone, a common control base of said one conductivity type in contact with said common main base, first and second outer emitter zones of said opposite conductivity type in contact with said common control base, a common metallized electrode layer in contact with said common emitter zone, a first opposite metallized electrode layer in contact with a portion of said common control base and said first outer emitter zone at a junction between said common control base and said first outer emitter zone, and a second opposite metallized electrode layer in contact with a portion of said common control base and said second outer emitter zone at a junction between said common control base and said second outer emitter zone, said first outer emitter zone defining a pilot thyristor part thereabout and said second outer emitter zone defining a sequential thyristor thereabout, a geometry of said first and second outer emitter zones and said first and second opposite metallized electrode layers bein…