High-intensity, solid-state solar cell
US4283589A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1979 |
| Grant date | Aug 11, 1981 |
| Priority date | — |
| Expiry date | Jul 10, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A semiconductor solar cell capable of converting incident radiation to electrical energy at high efficiency includes a plurality of series-connected unit solar cells formed from a common wafer of semiconductor material. The unit solar cells each include a semiconductor substrate of one conductivity type and a p-n junction formed in the substrate. The light-receiving surface of the cell may have an opaque member thereon, and incident light is directed onto the portion of that surface not covered by the opaque member. A variety of embodiments illustrates the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.