Patent · US Expired

High-intensity, solid-state solar cell

US4283589A · kind A · utility

22Cited by
4References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 10, 1979
Grant dateAug 11, 1981
Priority date
Expiry dateJul 10, 1999

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50

Abstract

A semiconductor solar cell capable of converting incident radiation to electrical energy at high efficiency includes a plurality of series-connected unit solar cells formed from a common wafer of semiconductor material. The unit solar cells each include a semiconductor substrate of one conductivity type and a p-n junction formed in the substrate. The light-receiving surface of the cell may have an opaque member thereon, and incident light is directed onto the portion of that surface not covered by the opaque member. A variety of embodiments illustrates the invention.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.