Light-absorbing materials
US4284689A · kind A · utility
23Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1980 |
| Grant date | Aug 18, 1981 |
| Priority date | — |
| Expiry date | Apr 7, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/261
- WIPO fieldThermal processes and apparatus
- WIPO sectorMechanical engineering
Abstract
Materials have been made that exhibit high absorption in the visible, near ultraviolet, and near infrared spectral region while simultaneously exhibiting low absorptivity in the thermal infrared. Exemplary of such materials is silicon which is etched in a reactive sputtering process in the presence of a sputterable material. Other materials exhibiting useful properties are produced by this method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.