Chemical vapor deposition reactor with infrared reflector
US4284867A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1979 |
| Grant date | Aug 18, 1981 |
| Priority date | — |
| Expiry date | Feb 9, 1999 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/105
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The reactor includes an R.F. induction coil, connected to a power supply, and located in proximity to the deposition enclosure. The coil radiates energy, a portion of which is converted by a susceptor situated in the enclosure into heat which is applied to the surface of the wafer adjacent thereto. A concave metallic infrared reflector redirects some of the normally unused radiated energy, in the form of radiant heat, onto the external surface of the wafer to promote even heating and, thus, reduce temperature gradients in the wafer thereby eliminating detrimental dislocation motion or slip. Moreover, the input power requirements of the system are reduced. Preferably, the enclosure is cooled by spraying de-ionized liquid thereon to eliminate unwanted deposition of dopants on the interior surface thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.