Etalon laser diode
US4284963A · kind A · utility
15Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1979 |
| Grant date | Aug 18, 1981 |
| Priority date | — |
| Expiry date | Aug 24, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1064
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode suitable for integrated and fiber optic applications requiring single transverse and single longitudinal mode operation. The single transverse mode is provided by making a gallium arsenide double heterostructural laser diode with a narrow stripe width and a relatively long length. The single longitudinal mode operation is provided by cracking the diode transverse to the stripe at one or more locations to form internal etalons in the laser cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.