Process for selectively forming refractory metal silicide layers on semiconductor devices
US4285761A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1980 |
| Grant date | Aug 25, 1981 |
| Priority date | — |
| Expiry date | Jun 30, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a refractory metal silicide pattern on a substrate by (1) forming a blanket layer of SiO.sub.2 on the substrate, (2) depositing a blanket layer of polycrystalline Si over the SiO.sub.2 layer, (3) defining a pattern in the blanket Si layer thereby exposing selected areas of the SiO.sub.2 layer, (4) depositing a blanket layer of refractory metal silicide on the substrate over the SiO.sub.2 and Si layers, (5) heating the substrate in an oxidizing environment to a temperature sufficient to oxidize the metal silicide layer over the Si to form an upper layer of SiO.sub.2 and to convert the metal silicide layer overlying the SiO.sub.2 layer to a metal rich SiO.sub.2 layer, and exposing the oxidized surface to an etchant that selectively etches away the metal rich SiO.sub.2 layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.