Halogen doped selenium-tellurium alloy electrophotographic photoconductor
US4286035A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1980 |
| Grant date | Aug 25, 1981 |
| Priority date | — |
| Expiry date | May 28, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08207
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, the photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 5 to 20 wt. % and halogen, with a concentration in the range of 5 to 500 ppm, selected from the group consisting of fluorine, chlorine, bromine and iodine, in the photosensitive layer, with the concentration of tellurium substantially uniform or increasing in the direction toward the surface of the photosensitive layer and the ratio of the concentration of tellurium near the electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 or more:100.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.