Laser with distributed reflector
US4286232A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1979 |
| Grant date | Aug 25, 1981 |
| Priority date | — |
| Expiry date | Jun 7, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4031
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a semiconductor laser with a distributed reflector comprising a semiconductor junction, one of whose semi-transparent mirrors is a split face of the semiconductor in which is integrated a light emitting junction with epitaxial layers. The active layer of this junction is coupled to a waveguide integrated in a dielectric medium, on one face of which is engraved a grating forming a distributed reflector playing the part of the second mirror. The reflector, when functioning according the second order of counter coupling emits a diffracted wave normal to the waveguide which can easily be coupled to an optical fiber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.