Method of making negative electron affinity photocathode
US4286373A · kind A · utility
15Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1980 |
| Grant date | Sep 1, 1981 |
| Priority date | — |
| Expiry date | Jan 8, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/3423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of making transmission mode glass-sealed negative electron affinity (NEA) gallium arsenide (GaAs) photocathodes, utilizing germanium (Ge) as the seed crystal and multilayers of GaAs and gallium aluminum arsenide (GaAlAs) grown by metal alkyl-hydride vapor-phase epitaxy. The GaAs serves as the photoemitting layer and the GaAlAs serves as the passivating layer. The Ge, GaAs,GaAlAs combination is sealed to a glass support substrate which serves as the input window for the device. Finally, the Ge is removed and the GaAs is activated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.