Opto-electronic devices based on bulk crystals of complex semiconductors
US4287527A · kind A · utility
3Cited by
2References
4Claims
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Assignee
Inventors
Key dates
| Filing date | Sep 7, 1979 |
| Grant date | Sep 1, 1981 |
| Priority date | — |
| Expiry date | Sep 7, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
Opto-electronic devices such as photodetectors have been made based on bulk crystals of Ga.sub.x In.sub.1-x P.sub.y As.sub.1-y. These bulk crystals have high purity, e.g., less than 10.sup.16 carriers/cm.sup.3 and low defect densities, e.g., less than 10.sup.6 cm.sup.-2. The properties of these crystals lead to photodetectors with good quantum efficiencies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.