Method of forming a microscopic pattern
US4288283A · kind A · utility
21Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1980 |
| Grant date | Sep 8, 1981 |
| Priority date | — |
| Expiry date | Jan 8, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a microscopic pattern wherein the object to be etched is overlaid with a film made of a material which is highly immune to etching and further provided with a reflection reducing film. Thus, the reflection of the irradiating ultraviolet rays by the underlying layer is effectively prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.