Passivated thin-film hybrid circuits
US4288776A · kind A · utility
30Cited by
9References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 9, 1980 |
| Grant date | Sep 8, 1981 |
| Priority date | — |
| Expiry date | Jan 9, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49156
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Thin-film microcircuit structures passivated with silicon nitride are provided in which included electrical components containing nickel, chromium or other nitride-forming metals are encapsulated in an oxide material, preferably silicon oxide. The metal-containing components are thus prevented from reacting with the silicon nitride passivation coating during through-passivation laser trimming of the components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.