Patent · US Expired

Phosphorus-nitrogen-oxygen composition and method for making such composition and applications of the same

US4289539A · kind A · utility

2Cited by
5References
6Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 25, 1979
Grant dateSep 15, 1981
Priority date
Expiry dateMay 25, 1999

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S252/951
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A composition is described which comprises amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400.degree.-900.degree. C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.