Method of fabricating surface contacts for buried layer into dielectric isolated islands
US4290831A · kind A · utility
19Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 1980 |
| Grant date | Sep 22, 1981 |
| Priority date | — |
| Expiry date | Apr 18, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Low resistance contact paths to selected buried layers in dielectrically isolated islands are formed by V-etching the selected island moats in a substrate, non-selectively diffusing impurities into the surface of the substrate and selected moats, V-etching to form all the moat structure, forming a dielectric layer on said surface and moats, applying support material to over-fill said moats and cover said surface, removing the opposite surface of said substrate to expose support material, and forming devices in said opposite surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.