Heterojunction IMPATT diode
US4291320A · kind A · utility
4Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 1980 |
| Grant date | Sep 22, 1981 |
| Priority date | — |
| Expiry date | Jan 10, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/40
Abstract
A double drift IMPATT diode is formed from two semiconductors having different band gaps and carrier mobilities. The avalanche portion of the diode is created in the semiconductor having the lower band gap. The electron drift portion is created in the semiconductor having the higher electron mobility and the hole drift portion is created in the semiconductor having the higher hole mobility. This decreases the voltage required across the avalanche portion, decreases the series resistance, and thus increases the efficiency of the diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.