Indium phosphide arsenide based devices
US4291323A · kind A · utility
9Cited by
1References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 1, 1980 |
| Grant date | Sep 22, 1981 |
| Priority date | — |
| Expiry date | May 1, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
Devices based on InAs.sub.1-x P.sub.x where 0.85.ltoreq.x<1 show advantageous properties. An exemplary device is a rectifying diode formed from indium tin oxide deposited on the subject InAs.sub.1-x P.sub.x.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.