Gaseous plasma developing and etching process employing low voltage DC generation
US4292384A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1979 |
| Grant date | Sep 29, 1981 |
| Priority date | — |
| Expiry date | Jul 10, 1999 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/027
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A device for dry development of photoresists, etching of semiconductor devices, fabrication of photomasks and removal of photoresist materials is described. The device includes a reaction chamber, a means for evacuating the reaction chamber, a supply of and means for introducing one or more reactive gases to the reaction chamber, a controllable relatively low-voltage direct-current power supply to generate a gas plasma in the reaction chamber, planar electrodes to confine the plasma energy to specific target areas in the chamber, means for defining and controlling the temperature of targets to be processed in the chamber and means for modifying and controlling the temperature of the plasma generating gas. The device and the manner of using the same are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.