Semiconductor thyristor device having integral ballast means
US4292646A · kind A · utility
7Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1977 |
| Grant date | Sep 29, 1981 |
| Priority date | — |
| Expiry date | Jan 7, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
A semiconductor thyristor device having a cathode region and an anode region comprises ballast means adjacent thereto. The device further comprises first and second electrode means which are positioned such that only the cathode region and the anode region respectively are contacted thereby. The present structure is compatible with conventional device structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.