Method for the epitaxial growth of boron phosphorous semiconductors
US4293370A · kind A · utility
3Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1980 |
| Grant date | Oct 6, 1981 |
| Priority date | — |
| Expiry date | Feb 13, 2000 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The epitaxial growth of boron-phosphorous semiconductors can be accomplished by chemically reacting the gas materials diborane and phosphorous trichloride. The preferable temperature of the substrate in 880.degree. C.-1,110.degree. C. and the preferable ratio of the phosphorous trichloride to diborane in mol is 2-200. Use is made of a composite substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.