High aspect ratio, high resolution mask fabrication
US4293374A · kind A · utility
6Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1980 |
| Grant date | Oct 6, 1981 |
| Priority date | — |
| Expiry date | Mar 10, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/944
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high aspect ratio collimating mask for use in ion beam epitaxy or ion implantation doping is formed through the use of damage-trail-forming materials which are irradiated through a mask and then etched. The high aspect ratio is obtained in part by the sequential formation of a plurality of spaced mask plates. The mask is useful in producing large scale integrated circuits by ion implantation during epitaxial growth of a crystal wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.