Infrared radiation detecting apparatus and method of manufacturing
US4293768A · kind A · utility
16Cited by
6References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 1979 |
| Grant date | Oct 6, 1981 |
| Priority date | — |
| Expiry date | Apr 18, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An infrared radiation sensing device such as a pyroelectric effect device is mounted on one surface of an insulating substrate of alumina ceramic or the like. External connection leads are provided on the insulating substrate. A field effect transistor is provided on the other surface of the insulating substrate for amplifying the signal generated in the sensing device by incident infrared radiation. The apparatus is suitably encapsulated in a layer of resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.