Cd(Se,Te) Alloy photovoltaic materials
US4296188A · kind A · utility
13Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1980 |
| Grant date | Oct 20, 1981 |
| Priority date | — |
| Expiry date | Mar 27, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/543
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photovoltaic system comprising a Cd(Se,Te) alloy junction forming material. A process of preparing a thin layer of the alloy by electrodeposition and by application of a slurry of the alloy to a substrate which is then annealed at an elevated temperature. The junction forming material finds particular application in photoelectrochemical cell systems; particularly those containing S/S.sup.= electrolytes. Electrodes formed of the inventive materials exhibit increased efficiency and improved stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.