Compound semiconductor device having a semiconductor-converted conductive region
US4296424A · kind A · utility
27Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 1979 |
| Grant date | Oct 20, 1981 |
| Priority date | — |
| Expiry date | Mar 22, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a compound semiconductor device such as a magnetoresistance element or Hall element having a compound semiconductor portion such as of InSb and an electrode portion, a portion of the compound semiconductor portion is exposed to energy irradiation to be converted into an alloy state or amorphous state and rendered conductive to form the electrode portion. The portion rendered conductive is contiguous to and in ohmic contact with the unexposed portion of the compound semiconductor and used as a shorting bar electrode or an external lead bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.