Method of treating SiPOS passivated high voltage semiconductor device
US4297149A · kind A · utility
4Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 1980 |
| Grant date | Oct 27, 1981 |
| Priority date | — |
| Expiry date | May 5, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The breakdown voltage of high voltage semiconductor devices passivated with SiPOS deteriorates if the devices are allowed to soak at temperatures in the 400.degree. C. to 525.degree. C. range. The original breakdown voltage is recovered by annealing the devices at a temperature of above about 550.degree. C. prior to metallization and alloying the metal at less than 425.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.