High frequency sputtering produces thin film amorphous silicon photoconductor
US4297392A · kind A · utility
13Cited by
4References
6Claims
0Family size
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Key dates
| Filing date | Nov 2, 1979 |
| Grant date | Oct 27, 1981 |
| Priority date | — |
| Expiry date | Nov 2, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the course of producing a thin film of amorphous silicon by high frequency sputtering elemental silicon under an atmosphere containing at least hydrogen gas, the temperature of the base plate onto which the amorphous silicon is deposited is maintained at a temperature of about 50.degree. C. to 150.degree. C. The thus obtained silicon film possesses not only photoconductivity sufficient for use as a photoconductor but also a large difference between photoconductivity and dard conductivity. In addition, a photoconductor of an amorphous silicon thin film can be produced at low cost without environmental pollution problems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.