Field effect transistor
US4298879A · kind A · utility
9Cited by
1References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 4, 1980 |
| Grant date | Nov 3, 1981 |
| Priority date | — |
| Expiry date | Feb 4, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a field effect transistor having interdigital electrodes the gate bonding pad portion is situated in the space formed between a pair of adjacent divided portions of the active region of the field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.