Lateral double-diffused MOS transistor device
US4300150A · kind A · utility
172Cited by
1References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 16, 1980 |
| Grant date | Nov 10, 1981 |
| Priority date | — |
| Expiry date | Jun 16, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/901
Abstract
A lateral double-diffused MOS transistor includes a field-shaping semiconductor layer which serves to improve the breakdown voltage and/or on-resistance characteristics of the device. The field-shaping layer redistributes the electrical field in the device during operation in order to eliminate electrical field crowding in portions of the device where breakdown would otherwise first occur. The field shaping layer may be a buried layer, a surface layer, or a composite layer having both buried and surface layer portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.