Nonvolatile static random access memory devices
US4300212A · kind A · utility
287Cited by
1References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 24, 1979 |
| Grant date | Nov 10, 1981 |
| Priority date | — |
| Expiry date | Jan 24, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/903
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Nonvolatile, semiconductor random access memory cells comprising a static, RAM cell and a nonvolatile memory element which may be interconnected with the static random-access memory cell by capacitative coupling, such that the RAM cell contents may be directly copied to the nonvolatile element, and such that the nonvolatile memory cell contents will be copied to the RAM cell upon applying power to the RAM cell. The nonvolatile memory element may be a substrate-coupled floating gate cell incorporating self-regulated and asperity enhanced tunnel currents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.