Dual discharge plasma device
US4301391A · kind A · utility
18Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1979 |
| Grant date | Nov 17, 1981 |
| Priority date | — |
| Expiry date | Apr 26, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The first plasma discharge chamber of the dual discharge plasma device contains an electron emitter and a first anode and contains gas at a sufficiently high pressure that the discharge voltage in the first chamber is below the sputtering threshold. The second chamber has a main anode and receives a plume of plasma from the first chamber. The main anode operates at a voltage above the sputtering threshold with a respect to the first anode and the gas in the second chamber is at a low enough pressure for a conventional low pressure plasma discharge which is used as an ion source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.