Method of fabricating semiconductor junction device employing separate metallization
US4301592A · kind A · utility
19Cited by
2References
5Claims
0Family size
Inventor
Key dates
| Filing date | Jan 21, 1980 |
| Grant date | Nov 24, 1981 |
| Priority date | — |
| Expiry date | Jan 21, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/02
Abstract
A method of fabricating a p-n junction device such as solar cells using metal contacts for p regions and n region heat-treated at two different temperatures. A metal with low work functions is heated first to a high temeperature for making ohmic contact to a p-type semiconductor substrate, and then at low temperature for contacting the n-type region. A metal with high work function is heated first to a high temperature for contacting an n-type semiconductor substrate and then at low temperature for contacting the p-type region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.