Semiconductor component with at least one planar PN junction and zone guard rings
US4305085A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1979 |
| Grant date | Dec 8, 1981 |
| Priority date | — |
| Expiry date | Sep 18, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
Abstract
A semiconductor component including at least one planar PN junction formed between a first semiconductor region and a second semiconductor region, zone guard rings surrounding the first region and surrounded by the second region in order to improve the reverse-current behavior of the PN junction, and a third semiconductor region having the same conductivity type as the second region, but having a higher doping concentration than the latter provided in the second region preceding the respective edges of the guard rings on the side of the PN junction. Typically the third region is doped such that with the PN junction polarized in the blocking direction, at least one point in the third region remains at zero field strength. Additionally provided is a fourth semiconductor region between the guard rings and between the guard ring closest the PN junction and the PN junction, which has the same conductivity type as the second region, but a lesser doping concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.