Thin magnetoresistive head
US4306215A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 16, 1979 |
| Grant date | Dec 15, 1981 |
| Priority date | — |
| Expiry date | Jul 16, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Flux sensitive apparatus, in one form thereof, employs paired thin single domain magnetic film structures, the easy magnetization axes of which are canted with respect to the direction of sense current flow therewithin. The magnetization vectors of the film structures are opposite with respect to each other, thereby to preclude, or at least lessen, demagnetization fields associated with the structures. By special connections between the thin film structures, the respective sense currents therein are provided with the same spatial direction of flow; and mutual biasing of the structures is thereby avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.