Reactive sputter etching apparatus
US4309267A · kind A · utility
26Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 1980 |
| Grant date | Jan 5, 1982 |
| Priority date | — |
| Expiry date | Jul 21, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An rf sputter etch or reactive sputter etch apparatus which can be used for etching substrates at oblique angles utilizes a cathode formed from a metal grid and an equipotential enclosure. The substrate is supported in the enclosure either parallel to or at an oblique angle to the surface of the grid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.